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1N6266
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31) 0.184 (4.67)
FEATURES
* Good optical to mechanical alignment * Mechanically and wavelength matched to the TO-18 series phototransistor
0.030 (0.76) NOM
0.255 (6.48)
* Hermetically sealed package * High irradiance level * (*) Indicates JEDEC registered values
1.00 (25.4) MIN
ANODE (CASE)
DESCRIPTION
* The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package.
SCHEMATIC
ANODE (Connected To Case) CATHODE 3
0.100 (2.54) 0.050 (1.27)
1
0.040 (1.02) 0.040 (1.02) 45
1
3 O0.020 (0.51) 2X
NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/C above 25C ambient. 2. Derate power dissipation linearly 13.0 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature *Storage Temperature *Soldering Temperature (Iron)(3,4,5 and 6) *Soldering Temperature (Flow)(3,4 and 6) *Continuous Forward Current *Forward Current (pw, 1s; 200Hz) *Reverse Voltage *Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2)
(TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF IF VR PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 100 10 3 170 1.3 Unit C C C C mA A V mW W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS
(TA =25C) (All measurements made under pulse conditions)
MIN TYP MAX UNITS
SYMBOL
P
*Peak Emission Wavelength Emission Angle at 1/2 Power Forward Voltage *Reverse Leakage Current *Radiant Intensity Rise Time 0-90% of output Fall Time 100-10% of output
IF = 100 mA IF = 100 mA VR = 3 V IF = 100 mA
935 -- -- -- 25 -- --
-- 10 -- -- -- 1.0 1.0
955 -- 1.7 10 -- -- --
nm Deg. V A mW/sr s s
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VF IR Ie tr tf
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2001 Fairchild Semiconductor Corporation DS300278 3/12/01
1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
10 8 150
TA = MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (C)
6 4
IF = INPUT CURRENT (mA)
PU
125
LS
E
W
2
ID
TH
100
=
2
S
1.0 0.8 0.6
S 50
75 100% Duty Cycle 50 10% Duty Cycle 1% Duty Cycle
10 S
0.4
S 0 10
0.2
25
0.1 10 100 1000 10,000 100,000
0
.01 .02 .04 .06 .08 0.1 .2 .4 .6 .8 1.0 2 4 6 8 10
f = FREQUENCY - HERTZ
IF - INPUT CURRENT (mA)
Fig.1 Maximum Pulse Capability
100 .80 60 40
Fig.2 Maximum Temperature vs. Input Current
10.0 8.0 6.0 4.0
Ie = NORMALIZED RADIANT INTENSITY
IF = FORWARD CURRENT (A)
20 10 8 6 4 2 1.0 .8 .6 .4 .2 .10 .08 .06 .04 .02 .01
2.0 1.0 0.8 0.6 0.4 0.2 0.1 .08 .06 .04 .02 .01
Normalized to: IF = 100 mA = .01 Steradians TA = 25C
.01
.02
.04 .06 .08 .1
.2
.4
.6 .8 1.0
2
4
6 8 10
0
1
2
3
4
5
6
7
8
9
10
IF - INPUT CURRENT (A)
VF - FORWARD VOLTAGE (V)
Fig.3 Radiant Intensity vs. Input Current le/ l
Fig.4 Forward Voltage vs. Forward Current
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1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
100 80 60 1.0
IF = FORWARD CURRENT (mA)
40
0.8
20 10 8 6 4
RELATIVE OUTPUT
1.4 1.5
0.6
TA = 100C
25C
-55C
0.4
2
0.2
0 0.9 1.0 1.1 1.2 1.3
0 880 900 920 940 960 980 1000 1020
VF - FORWARD VOLTAGE (V)
- WAVELENGTH - NANOMETERS
Fig.5 Forward Voltage vs. Forward Current
Fig.6 Spectral Output
IR = NORMALIZED POWER OUTPUT
100 80 60 40 20 10 8 6 4 2 1.0 .8 .6 .4 .2 .10 .08 .06 .04 .02 .01
IF = 1 A
Normalized to: IF = 100 mA = .01 Steradians TA = 25C Silicon Photodiode as Detector
IF = 100 mA
IF = 10 mA
-50
-25
0
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (C)
Fig.7 Output vs. Temperature
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1N6266
GaAs INFRARED EMITTING DIODE
INFRARED EMITTING DIODE RADIANT INTENSITY
The design of an Infrared Emitting Diode (IRED)-photodetector system normally requires the designer to determine the minimum amount of infrared irradiance received by the photodetector, which then allows definition of the photodetector current. Prior to the introduction of the 1N6266, the best method of estimating the photodetector received infrared was to geometrically proportion the piecewise integration of the typical beam pattern with the specified minimum total power output of the IRED. However, due to inconsistencies of the IRED integral lenses and the beam lobes, this procedure will not provide a valid estimation. The 1N6266 now provides the designer specifications which precisely define the infrared beam along the device's mechanical axis. The 1N6266 is a premium device selected to give a minimum radiant intensity of 25 mW/steradian into the 0.01 steradians referenced by the the device's mechanical axis and seating plane. Radiant intensity is the IRED beam power output, within a specified solid angle, per unit solid angle. A quick review of geometry indicates that a steradian is a unit of solid angle, referenced to the center of a sphere, defined by 4 times the ratio of the area projected by the solid angle to the area of the sphere. The solid angle is equal to the projected area divided by the squared radius. Steradians = 4 A/4 R2 = A/R2 = Radiant intensity provides an easy, accurate tool to calculate the infrared power received by a photodetector located on the IRED axis. As the devices are selected for beam characteristics, the calculated results are valid for worst case analysis. For many applications a simple approximation for photodetector irradiance is: H Ie/d2, in mw/cm2 where d is the distance from the IRED to the detector in cm. IRED power output, and therefore Ie, depends on IRED current. This variation ( Ie/ I) is documented in Figure 3, and completes the approximation: H = Ie/d2 ( Ie/ I). This normally gives a conservative value of irradiance. For more accurate results, the effect of precise angle viewed by the detector must be considered. This is documented in figure 8 ( Ie/ ) giving: ) in mw/cm2 H = Ie/d2 ( Ie/ For worst case designs, temperature coefficients and tolerances must be considered. The minimum output current of the detector (IL) can be determined for a given distance (d) of the detector from the IRED. IL = (S)H (S) Ie/d2 or IL = (S)H = (S) (Ie/d2) ( Ie/ ) ( Ie/ I)
As the projected area has a circular periphery, a geometric integration will solve to show the relationship of the Cartesian angle ( ) of the cone, (from the center of the sphere) to the projected area. = 2 (1 - COS 2 )
where S is the sensitivity of the detector in terms of output current per unit irradiance from a GaAs source.
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1N6266
GaAs INFRARED EMITTING DIODE
IRED RADIANT INTENSITY SPECIFICATION CONCEPT
IRED Seating Plane
SPHERE Centered on IRED Axis C and L Seating Plane
IRED
Area "A" Receives Power "Pw" C L
d
2 Ie = Pw/ mW/Steradians H = Pw/A = Ie/d2 mW/cm2
= A/d2 = 2 (I - COS
) Steradians
MATCHING A PHOTOTRANSISTOR WITH 1N6266 Assume a system requiring a 10 mA IL at an IRED to detector spacing of 2 cm (seating plane to seating plane), with bias conditions at specification points. Given: d1 = 2 cm, IL = 10 mA min.; Ie = 25 mW/Steradian Then: H1 Ie/d12 = 25/(2)2 = 6.25 mW/cm2 Detector Evaluation: IL MIN @ TYPE mA L14G1 1 L14G2 0.5 Calculated IL @ d1 is: L14G1 (S) H1 = (2) 6.25 = 12.5 mA L14G2 (S) H1 = (1) 6.25 = 6.25 mA
H (GaAs) mW/cm2 0.5 0.5
S(GaAs) mA/mw/cm2 2 1
Since the system requires an IL of 10 mA minimum the correct device to use is the L14G1.
TYPICAL CHARACTERISTICS
1.4 =A r2 1.2 = 2 (I - COS 1.0 r 0.8 2 ) AREA A
IF = NORMALIZED RADIANT INTENSITY
0.6 Normalized to: IF = 100 mA = .01 Steradians TA = 25C
0.4
0.2
0.1 .001 1 2 .002 1 3 .004 .006 1 4 1 5 .01 1 7 .02 1 10 .04 .06.08 .1 1 15 1 20 Steradians Degrees .6 .8 1.0 1 45 1 60
Fig.8 Intensity and Power vs. Angle le/
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1N6266
GaAs INFRARED EMITTING DIODE
MAXIMUM RATINGS CURVES
ICE(ON) = NORMALIZED COLLECTOR CURRENT
1.4 100.0 Normalized to: IF = 100 mA D = 6 cm Distance measured from seating plane to seating plane
1.2
NORMALIZED ICE(ON)
1.0
10.0
1N6N66 D
L14G1
0.8
0.6 Normalized to: IF = 100 mA VCE = 5 V TA = 25C
IF = 1A, Pulsed 1.0 IF = 100 mA, DC
0.4
1N6266 1.0"
L14G1
0.2
0 -50 -25 0 25 50 75 100 125 150
0 0 5 10 15 20 25
TA - AMBIENT TEMPERATURE (C)
D - cm
Fig. 9 Output vs. Ambient Temperature IRED/Phototransistor Pair
Fig. 10 IL vs. Distance IRED/Phototransistor Pair
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1N6266
GaAs INFRARED EMITTING DIODE
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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